Showing 1–20 of 20 results for author: Drndic, M

Electrically Tunable Magnetoconductance of Close-Packed CVD Bilayer Graphene Layer Stacking Walls

Authors: Qicheng Zhang, Sheng Wang, Zhaoli Gao, Sebastian Hurtado-Parra, Joel Berry, Zachariah Addison, Paul Masih Das, William M. Parkin, Marija Drndic, James M. Kikkawa, Feng Wang, Eugene J. Mele, A. T. Charlie Johnson, Zhengtang Luo

Abstract: Quantum valley Hall (QVH) domain wall states are a new class of one-dimensional (1D) one-way conductors that are topologically protected in the absence of valley mixing. Development beyond a single QVH channel raises important new questions as to how QVH channels in close spatial proximity interact with each other, and how that interaction may be controlled. Scalable epitaxial bilayer graphene syn… ▽ More Quantum valley Hall (QVH) domain wall states are a new class of one-dimensional (1D) one-way conductors that are topologically protected in the absence of valley mixing. Development beyond a single QVH channel raises important new questions as to how QVH channels in close spatial proximity interact with each other, and how that interaction may be controlled. Scalable epitaxial bilayer graphene synthesis produces layer stacking wall (LSW) bundles, where QVH channels are bound, providing an excellent platform to study QVH channel interactions. Here we show that distinct strain sources lead to the formation of both well-separated LSWs and close packed LSW bundles. Comparative studies of electronic transport in these two regimes reveal that close-packed LSW bundles support electrically tunable magnetoconductance. The coexistence of different strain sources offers a potential pathway to realize scalable quantum transport platform based on LSWs where electrically tunability enables programmable functionality. △ Less

Submitted 10 June, 2024; originally announced June 2024.

High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

Authors: Seunguk Song, Kwan-Ho Kim, Rachael Keneipp, Nicholas Trainor, Chen Chen, Jeffrey Zheng, Joan M. Redwing, Marija Drndić, Roy H. Olsson III, Deep Jariwala

Abstract: Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of FeFETs can be limited by a charge imbalance between the ferroelectric layer and the channel, and for low-dimensional semiconductors, also by a high contact resistan… ▽ More Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of FeFETs can be limited by a charge imbalance between the ferroelectric layer and the channel, and for low-dimensional semiconductors, also by a high contact resistance between the metal electrodes and the channel. Here, we report a significant enhancement in performance of contact-engineered FeFETs with a 2D MoS2 channel and a ferroelectric Al0.68Sc0.32N (AlScN) gate dielectric. Replacing Ti with In contact electrodes results in a fivefold increase in on-state current (~120 uA/um at 1 V) and on-to-off ratio (~2*10^7) in the FeFETs. In addition, the high carrier concentration in the MoS2 channel during the on-state (> 10^14 cm^-2) facilitates the observation of a metal-to-insulator phase transition in monolayer MoS2 permitting observation of high field effect mobility (> 100 cm^2V^-1s^-1) at cryogenic temperatures. Our work and devices broaden the potential of FeFETs and provides a unique platform to implement high-carrier-density transport in a 2D channel. △ Less

Submitted 4 June, 2024; originally announced June 2024.

Comments: 42 pages, 5 main figures

Controlled Growth of Large-Area Bilayer Tungsten Diselenides with Lateral P-N Junctions

Authors: Srinivas V. Mandyam, Meng Qiang Zhao, Paul Masih Das, Qicheng Zhang, Christopher C. Price, Zhaoli Gao, Vivek B. Shenoy, Marija Drndic, Alan T. Charlie Johnson

Abstract: Bilayer two-dimensional (2D) van der Waals (vdW) materials are attracting increasing attention due to their predicted high quality electronic and optical properties. Here we demonstrate dense, selective growth of WSe2 bilayer flakes by chemical vapor deposition with the use of a 1:10 molar mixture of sodium cholate and sodium chloride as the growth promoter to control the local diffusion of W-cont… ▽ More Bilayer two-dimensional (2D) van der Waals (vdW) materials are attracting increasing attention due to their predicted high quality electronic and optical properties. Here we demonstrate dense, selective growth of WSe2 bilayer flakes by chemical vapor deposition with the use of a 1:10 molar mixture of sodium cholate and sodium chloride as the growth promoter to control the local diffusion of W-containing species. A large fraction of the bilayer WSe2 flakes showed a 0 and 60o twist between the two layers, while moire 15 and 30o-twist angles were also observed. Well-defined monolayer-bilayer junctions were formed in the as-grown bilayer WSe2 flakes, and these interfaces exhibited p-n diode rectification and an ambipolar transport characteristic. This work provides an efficient method for the layer-controlled growth of 2D materials, in particular, 2D transition metal dichalcogenides and promotes their applications in next-generation electronic and optoelectronic devices. △ Less

Submitted 23 August, 2019; originally announced August 2019.

TEM Nanosculpting of Topological Insulator Bi$_2$Se$_3$

Authors: Sarah Friedensen, William M. Parkin, Jerome T. Mlack, Marija Drndic

Abstract: We present a process for sculpting Bi$_2$Se$_3$ nanoflakes into application-relevant geometries using a high resolution transmission electron microscope. This process takes several minutes to sculpt small areas and can be used to cut the Bi$_2$Se$_3$ into wires and rings, to thin areas of the Bi$_2$Se$_3$, and to drill circular holes and lines. We determined that this method allows for sub 10-nm f… ▽ More We present a process for sculpting Bi$_2$Se$_3$ nanoflakes into application-relevant geometries using a high resolution transmission electron microscope. This process takes several minutes to sculpt small areas and can be used to cut the Bi$_2$Se$_3$ into wires and rings, to thin areas of the Bi$_2$Se$_3$, and to drill circular holes and lines. We determined that this method allows for sub 10-nm features and results in clean edges along the drilled regions. Using in-situ high-resolution imaging, selected area diffraction, and atomic force microscopy, we found that this lithography process preserves the crystal structure of Bi$_2$Se$_3$. TEM sculpting is more precise and potentially results in cleaner edges than does ion-beam modification; therefore, the promise of this method for thermoelectric and topological devices calls for further study into the transport properties of such structures. △ Less

Submitted 5 December, 2017; originally announced December 2017.

Comments: 11 pages, 7 figures

Materials analysis and focused ion beam nanofabrication of topological insulator Bi2Se3

Authors: Sarah Friedensen, Jerome T. Mlack, Marija Drndić

Abstract: Focused ion beam milling allows manipulation of the shape and size of nanostructures to create geometries potentially useful for opto-electronics, thermoelectrics, and quantum computing. We focus on using the ion beam to control the thickness of Bi2Se3 and to create nanowires from larger structures. Changes in the material structure of Bi2Se3 nanomaterials that have been milled using a focused ion… ▽ More Focused ion beam milling allows manipulation of the shape and size of nanostructures to create geometries potentially useful for opto-electronics, thermoelectrics, and quantum computing. We focus on using the ion beam to control the thickness of Bi2Se3 and to create nanowires from larger structures. Changes in the material structure of Bi2Se3 nanomaterials that have been milled using a focused ion beam are presented. In order to characterize the effects of ion beam processing on the samples, we use a variety of techniques including analytical transmission electron microscopy and atomic force microscopy. The results show that while part of the material remains intact after shaping, amorphous regions form where the beam has been used to thin the sample. For wires created by thinning the material down to the substrate, the sidewalls of the wires appear intact based on diffraction images from samples cut at an angle, but thin crystalline regions remain at the wire edges. Even with the resulting defects, focused ion beam milling shows promise for directly fabricating intricate nanodevices of Bi2Se3. △ Less

Submitted 20 June, 2017; originally announced June 2017.

Comments: 8 pages, 6 figures

Report number: Scientific Reports 7, Article number: 13466

Patterning Superconductivity in a Topological Insulator

Authors: Jerome T. Mlack, Atikur Rahman, Gopinath Danda, Natalia Drichko, Sarah Friedensen, Marija Drndic, Nina Markovic

Abstract: While topological superconductors are predicted to provide building blocks for fault-tolerant quantum computing, one of the remaining challenges is to find a convenient experimental platform that would allow patterning of circuits. We find that superconductivity can be patterned directly into Bi$_2$Se$_3$ nanostructures by selective doping with palladium (Pd). Superconducting regions are defined b… ▽ More While topological superconductors are predicted to provide building blocks for fault-tolerant quantum computing, one of the remaining challenges is to find a convenient experimental platform that would allow patterning of circuits. We find that superconductivity can be patterned directly into Bi$_2$Se$_3$ nanostructures by selective doping with palladium (Pd). Superconducting regions are defined by depositing Pd on top of the nanostructures using electron beam lithography, followed by in-situ annealing. Electrical transport measurements at low temperatures show either partial or full superconducting transition, depending on the doping conditions. Structural characterization techniques indicate that Pd remains localized in the targeted areas, making it possible to pattern superconducting circuits of arbitrary shapes in this topological material. △ Less

Submitted 27 October, 2016; originally announced October 2016.

Comments: 5 pages, 4 figure

In-situ electronic characterization of graphene nanoconstrictions fabricated in a transmission electron microscope

Authors: Ye Lu, Christopher A. Merchant, Marija Drndić, A. T. Charlie Johnson

Abstract: We report electronic measurements on high-quality graphene nanoconstrictions (GNCs) fabricated in a transmission electron microscope (TEM), and the first measurements on GNC conductance with an accurate measurement of constriction width down to 1 nm. To create the GNCs, freely-suspended graphene ribbons were fabricated using few-layer graphene grown by chemical vapor deposition. The ribbons were l… ▽ More We report electronic measurements on high-quality graphene nanoconstrictions (GNCs) fabricated in a transmission electron microscope (TEM), and the first measurements on GNC conductance with an accurate measurement of constriction width down to 1 nm. To create the GNCs, freely-suspended graphene ribbons were fabricated using few-layer graphene grown by chemical vapor deposition. The ribbons were loaded into the TEM, and a current-annealing procedure was used to clean the material and improve its electronic characteristics. The TEM beam was then used to sculpt GNCs to a series of desired widths in the range 1 - 700 nm; after each sculpting step, the sample was imaged by TEM and its electronic properties measured in-situ. GNC conductance was found to be remarkably high, comparable to that of exfoliated graphene samples of similar size. The GNC conductance varied with width approximately as, where w is the constriction width in nanometers. GNCs support current densities greater than 120 \muA/nm2, two orders of magnitude higher than has been previously reported for graphene nanoribbons and 2000 times higher than copper. △ Less

Submitted 26 October, 2011; originally announced October 2011.

Comments: 17 pages, 4 figures. Accepted by Nano Letters

DNA nucleotide-specific modulation of μA transverse edge currents through a metallic graphene nanoribbon with a nanopore

Authors: Kamal K. Saha, Marija Drndic, Branislav K. Nikolic

Abstract: We propose two-terminal devices for DNA sequencing which consist of a metallic graphene nanoribbon with zigzag edges (ZGNR) and a nanopore in its interior through which the DNA molecule is translocated. Using the nonequilibrium Green functions combined with density functional theory, we demonstrate that each of the four DNA nucleotides inserted into the nanopore, whose edge carbon atoms are passiv… ▽ More We propose two-terminal devices for DNA sequencing which consist of a metallic graphene nanoribbon with zigzag edges (ZGNR) and a nanopore in its interior through which the DNA molecule is translocated. Using the nonequilibrium Green functions combined with density functional theory, we demonstrate that each of the four DNA nucleotides inserted into the nanopore, whose edge carbon atoms are passivated by either hydrogen or nitrogen, will lead to a unique change in the device conductance. Unlike other recent biosensors based on transverse electronic transport through DNA nucleotides, which utilize small (of the order of pA) tunneling current across a nanogap or a nanopore yielding a poor signal-to-noise ratio, our device concept relies on the fact that in ZGNRs local current density is peaked around the edges so that drilling a nanopore away from the edges will not diminish the conductance. Inserting a DNA nucleotide into the nanopore affects the charge density in the surrounding area, thereby modulating edge conduction currents whose magnitude is of the order of μA at bias voltage ~ 0.1 V. The proposed biosensor is not limited to ZGNRs and it could be realized with other nanowires supporting transverse edge currents, such as chiral GNRs or wires made of two-dimensional topological insulators. △ Less

Submitted 18 August, 2011; originally announced August 2011.

Comments: 6 pages, 6 figures, PDFLaTeX

Journal ref: Nano Lett. 12, 50-55 (2012)

Controlling Nanogap Quantum Dot Photoconductivity through Optoelectronic Trap Manipulation

Authors: Lauren J. Willis, Jessamyn A. Fairfield, Tali Dadosh, Michael D. Fischbein, Marija Drndic

Abstract: Nanoscale devices are being extensively studied for their tunable electronic and optical properties, but the influence of impurities and defects is amplified at these length scales and can lead to poorly understood variations in characteristics of semiconducting materials. By performing a large ensemble of photoconductivity measurements in nanogaps bridged by core-shell CdSe/ZnS semiconductor na… ▽ More Nanoscale devices are being extensively studied for their tunable electronic and optical properties, but the influence of impurities and defects is amplified at these length scales and can lead to poorly understood variations in characteristics of semiconducting materials. By performing a large ensemble of photoconductivity measurements in nanogaps bridged by core-shell CdSe/ZnS semiconductor nanocrystals, we discover optoelectronic methods for affecting solid-state charge trap populations. We introduce a model that unifies previous work and transforms the problem of irreproducibility in nanocrystal electronic properties into a reproducible and robust photocurrent response due to trap state manipulation. Because traps dominate many physical processes, these findings may lead to improved performance and device tunability for various nanoscale applications through the control and optimization of impurities and defects. △ Less

Submitted 20 October, 2009; originally announced October 2009.

Comments: 10 pages, 5 figures, supporting information

Electron beam nanosculpting of suspended graphene sheets

Authors: Michael D. Fischbein, Marija Drndic

Abstract: We demonstrate high-resolution modification of suspended multi-layer graphene sheets by controlled exposure to the focused electron beam of a transmission electron microscope. We show that this technique can be used to realize, on timescales of a few seconds, a variety of features, including nanometer-scale pores, slits, and gaps that are stable and do not evolve over time. Despite the extreme t… ▽ More We demonstrate high-resolution modification of suspended multi-layer graphene sheets by controlled exposure to the focused electron beam of a transmission electron microscope. We show that this technique can be used to realize, on timescales of a few seconds, a variety of features, including nanometer-scale pores, slits, and gaps that are stable and do not evolve over time. Despite the extreme thinness of the suspended graphene sheets, extensive removal of material to produce the desired feature geometries is found to not introduce long-range distortion of the suspended sheet structure. △ Less

Submitted 22 August, 2008; v1 submitted 21 August, 2008; originally announced August 2008.

Fabrication of Metal Nanoscale Devices on Insulating Membranes by High-Resolution Atom Ablation

Authors: M. D. Fischbein, M. Drndic

Abstract: Transmission electron beams (TEBs) have long been used to study and manipulate materials at nanometer scales. In the late 1970's, Cherns demonstrated surface pitting in Au films upon exposure to a 1MeV TEB and observed crystal dislocations in quartz. Soon after, electron beam irradiation was used to drill nanoholes and lines in NaCl crystals, alumina sheets, CaF2 and MgO. More recent examples in… ▽ More Transmission electron beams (TEBs) have long been used to study and manipulate materials at nanometer scales. In the late 1970's, Cherns demonstrated surface pitting in Au films upon exposure to a 1MeV TEB and observed crystal dislocations in quartz. Soon after, electron beam irradiation was used to drill nanoholes and lines in NaCl crystals, alumina sheets, CaF2 and MgO. More recent examples include the drilling of nanoholes in silicon, stainless steel, and in Si3N4 and SiO2 membranes. In this Letter we demonstrate a new and highly flexible application of TEB-based fabrication to produce intricate metal geometries and fully integrated devices, with sub-10 nm features, on silicon nitride membranes. Arbitrary metal patterns may be "carved out" with sub-nanometer accuracy by ablating evaporated (Al, Ni, Cr, Ag, Au) metal films with the ~ 0.5 nm diameter beam of a high resolution transmission electron microscope. In situ imaging of the ablation action allows for real-time feedback control. Specific examples presented here include nanorings, nanowires with tailored curvatures and multi-terminal devices with nanoislands or nanoholes between the terminals. Importantly, these nanostructures are fabricated at precise locations on a chip and seamlessly integrated into large-scale circuitry. The combination of high resolution, geometrical control and yield make this fabrication method rather unique and highly attractive for many applications including nanoelectronics and molecular translocation. △ Less

Submitted 2 November, 2006; v1 submitted 1 November, 2006; originally announced November 2006.

Comments: 21 pages, 10 figures

Fluorescence blinking statistics from single CdSe nanorods

Authors: Siying Wang, Claudia Querner, Thomas Emmons, Marija Drndic, Catherine H. Crouch

Abstract: We report fluorescence blinking statistics measured from single CdSe nanorods (NRs) of seven different sizes with aspect ratio ranging from 3 to 11. This study included core/shell CdSe/ZnSe NRs and core NRs with two different surface ligands producing different degrees of surface passivation. We compare the findings for NRs to our measurements of blinking statistics from spherical CdSe core and… ▽ More We report fluorescence blinking statistics measured from single CdSe nanorods (NRs) of seven different sizes with aspect ratio ranging from 3 to 11. This study included core/shell CdSe/ZnSe NRs and core NRs with two different surface ligands producing different degrees of surface passivation. We compare the findings for NRs to our measurements of blinking statistics from spherical CdSe core and CdSe/ZnS core/shell nanocrystals (NCs). We find that for both NRs and spherical NCs, the off-time probability distributions are well described by a power law, while the on-time probability distributions are best described by a truncated power law. The measured crossover time is indistinguishable within experimental uncertainty for core and core/shell NRs, and for core NRs with different ligands, indicating that surface passivation does not affect the blinking statistics significantly. We find that at fixed excitation intensity, the inverse crossover time increases approximately linearly with increasing NR aspect ratio; for a given sample, the inverse crossover time increases very gradually with increasing excitation intensity. The measured per-particle absorption cross section for all samples indicates that the change in NR absorption cross-section with sample size can account for some but not all of the differences in crossover time. This suggests that the degree of quantum confinement may be partially responsible for the aspect ratio dependence of the crossover time. △ Less

Submitted 7 September, 2006; v1 submitted 12 March, 2006; originally announced March 2006.

Comments: 37 pages, 9 figures

Nanogaps by direct lithography for high-resolution imaging and electronic characterization of nanostructures

Authors: Michael D. Fischbein, Marija Drndic

Abstract: We report a method for fabricating nanogaps directly with electron beam lithography (EBL). The primary resolution-limit of EBL, electron back-scattering, is reduced dramatically by using a thin-film as a substrate. We show that this resolution enhancement allows one to fabricate metal electrodes with separation from arbitrarily large to under one nanometer. Furthermore, because these nanogaps ar… ▽ More We report a method for fabricating nanogaps directly with electron beam lithography (EBL). The primary resolution-limit of EBL, electron back-scattering, is reduced dramatically by using a thin-film as a substrate. We show that this resolution enhancement allows one to fabricate metal electrodes with separation from arbitrarily large to under one nanometer. Furthermore, because these nanogaps are on a thin film, they can be imaged with high-resolution transmission electron microscopy (HRTEM). Using these nanogaps we measured the charge transport through several coupled PbSe nanocrystals and correlated the data with detailed structural information obtained by performing HRTEM on the same device. △ Less

Submitted 6 December, 2005; originally announced December 2005.

Comments: 9 pages, 3 figures

Levy statistics and anomalous transport in quantum-dot arrays

Authors: D. S. Novikov, M. Drndic, L. S. Levitov, M. A. Kastner, M. V. Jarosz, M. G. Bawendi

Abstract: A novel model of transport is proposed to explain power law current transients and memory phenomena observed in partially ordered arrays of semiconducting nanocrystals. The model describes electron transport by a stationary Levy process of transmission events and thereby requires no time dependence of system properties. The waiting time distribution with a characteristic long tail gives rise to… ▽ More A novel model of transport is proposed to explain power law current transients and memory phenomena observed in partially ordered arrays of semiconducting nanocrystals. The model describes electron transport by a stationary Levy process of transmission events and thereby requires no time dependence of system properties. The waiting time distribution with a characteristic long tail gives rise to a nonstationary response in the presence of a voltage pulse. We report on noise measurements that agree well with the predicted non-Poissonian fluctuations in current, and discuss possible mechanisms leading to this behavior. △ Less

Submitted 10 August, 2005; v1 submitted 1 July, 2003; originally announced July 2003.

Comments: 7 pages, 2 figures

Journal ref: Phys. Rev. B 72, 075309 (2005)

Imaging the charge transport in arrays of CdSe nanocrystals

Authors: M. Drndic, R. Markov, M. V. Jarosz, M. G. Bawendi, M. A. Kastner, N. Markovic, M. Tinkham

Abstract: A novel method to image charge is used to measure the diffusion coefficient of electrons in films of CdSe nanocrystals at room temperature. This method makes possible the study of charge transport in films exhibiting high resistances or very small diffusion coefficients. A novel method to image charge is used to measure the diffusion coefficient of electrons in films of CdSe nanocrystals at room temperature. This method makes possible the study of charge transport in films exhibiting high resistances or very small diffusion coefficients. △ Less

Submitted 29 May, 2003; originally announced May 2003.

Comments: 4 pages, 4 jpg figures

Transport properties of annealed CdSe nanocrystal solids

Authors: M. Drndic, M. Vitasovic, N. Y. Morgan, M. A. Kastner, M. G. Bawendi

Abstract: Transport properties of artificial solids composed of colloidal CdSe nanocrystals (NCs) are studied from 6 K to 250 K, before and after annealing. Annealing results in greatly enhanced dark and photocurrent in NC solids, while transmission electron microscopy (TEM) micrographs show that the inter-dot separation decreases. The increased current can be attributed to the enhancement of inter-dot tu… ▽ More Transport properties of artificial solids composed of colloidal CdSe nanocrystals (NCs) are studied from 6 K to 250 K, before and after annealing. Annealing results in greatly enhanced dark and photocurrent in NC solids, while transmission electron microscopy (TEM) micrographs show that the inter-dot separation decreases. The increased current can be attributed to the enhancement of inter-dot tunneling caused by the decreased separation between NCs and by chemical changes in their organic cap. In addition, the absorption spectra of annealed solids are slightly red-shifted and broadened. These red-shifts may result from the change of the dielectric environment around the NCs. Our measurements also indicate that Coulomb interactions between charges on neighboring NCs play an important role in the tunneling current. △ Less

Submitted 29 April, 2002; originally announced April 2002.

Comments: 24 pages,4 figures, 1 table

Electronic transport in films of colloidal CdSe nanocrystals

Authors: Nicole Y. Morgan, C. A. Leatherdale, M. Drndic, Mirna Vitasovic, Marc A. Kastner, Moungi Bawendi

Abstract: We present results for electronic transport measurements on large three-dimensional arrays of CdSe nanocrystals. In response to a step in the applied voltage, we observe a power-law decay of the current over five orders of magnitude in time. Furthermore, we observe no steady-state dark current for fields up to 10^6 V/cm and times as long as 2x10^4 seconds. Although the power-law form of the deca… ▽ More We present results for electronic transport measurements on large three-dimensional arrays of CdSe nanocrystals. In response to a step in the applied voltage, we observe a power-law decay of the current over five orders of magnitude in time. Furthermore, we observe no steady-state dark current for fields up to 10^6 V/cm and times as long as 2x10^4 seconds. Although the power-law form of the decay is quite general, there are quantitative variations with temperature, applied field, sample history, and the material parameters of the array. Despite evidence that the charge injected into the film during the measurement causes the decay of current, we find field-scaling of the current at all times. The observation of extremely long-lived current transients suggests the importance of long-range Coulomb interactions between charges on different nanocrystals. △ Less

Submitted 25 April, 2002; originally announced April 2002.

Comments: 11 pages, 10 figures

Three-dimensional micro-electromagnet traps for neutral and charged particles

Authors: M. Drndic, C. S. Lee, R. M. Westervelt

Abstract: Three-dimensional (3D) micro-electromagnets were developed to control particle motion in magnetic field landscapes in vacuum near a chip. Multiple layers of micron-scale conductors separated by transparent insulators create particle containers with deep, symmetric and time-dependent potentials, suitable for integration in quantum circuits. Single and coupled multiple 3D traps, integrated 3D trap… ▽ More Three-dimensional (3D) micro-electromagnets were developed to control particle motion in magnetic field landscapes in vacuum near a chip. Multiple layers of micron-scale conductors separated by transparent insulators create particle containers with deep, symmetric and time-dependent potentials, suitable for integration in quantum circuits. Single and coupled multiple 3D traps, integrated 3D traps with a mirror, 3D guides for neutral particles with spin, and traps for electrons in vacuum are described. △ Less

Submitted 31 October, 2000; originally announced October 2000.

Comments: 15 pages, 1 table, 3 figures, Accepted for publication in Phys. Rev. B

Properties of Microelectromagnet Mirrors as Reflectors of Cold Rb Atoms

Authors: M. Drndic, G. Zabow, C. S. Lee, J. H. Thywissen, K. S. Johnson, M. Prentiss, R. M. Westervelt, P. D. Featonby, V. Savalli, L. Cognet, K. Helmerson, N. Westbrook, C. I. Westbrook, W. D. Phillips, A. Aspect

Abstract: Cryogenically cooled microelectromagnet mirrors were used to reflect a cloud of free-falling laser-cooled 85Rb atoms at normal incidence. The mirrors consisted of microfabricated current-carrying Au wires in a periodic serpentine pattern on a sapphire substrate. The fluorescence from the atomic cloud was imaged after it had bounced off a mirror. The transverse width of the cloud reached a local… ▽ More Cryogenically cooled microelectromagnet mirrors were used to reflect a cloud of free-falling laser-cooled 85Rb atoms at normal incidence. The mirrors consisted of microfabricated current-carrying Au wires in a periodic serpentine pattern on a sapphire substrate. The fluorescence from the atomic cloud was imaged after it had bounced off a mirror. The transverse width of the cloud reached a local minimum at an optimal current corresponding to minimum mirror roughness. A distinct increase in roughness was found for mirror configurations with even versus odd number of lines. These observations confirm theoretical predictions. △ Less

Submitted 19 August, 1999; originally announced August 1999.

Comments: Physical Review A, in print; 11 pages, 4 figures

Journal ref: Phys. Rev. A, Vol. 60 (5)

Guiding Neutral Atoms

Authors: N. H. Dekker, C. S. Lee, V. Lorent, J. H. Thywissen, M. Drndic, S. P. Smith, R. M. Westervelt, M. Prentiss

Abstract: We demonstrate the guiding of neutral atoms by the magnetic fields due to microfabricated current-carrying wires on a chip. Atoms are guided along a magnetic field minimum parallel to and above the current-carrying wires. Two waveguide configurations are demonstrated: one using two wires with an external magnetic field, and a second using four wires without an external field. These waveguide geo… ▽ More We demonstrate the guiding of neutral atoms by the magnetic fields due to microfabricated current-carrying wires on a chip. Atoms are guided along a magnetic field minimum parallel to and above the current-carrying wires. Two waveguide configurations are demonstrated: one using two wires with an external magnetic field, and a second using four wires without an external field. These waveguide geometries can be extended to integrated atom optics circuits, including beamsplitters. △ Less

Submitted 16 August, 1999; originally announced August 1999.

Comments: 11 pages, 4 figures

Journal ref: Physical Review Letters 84, 1124-1127 (2000)