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Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ and inverted Y$_{3}$Fe$_{5}$O$_{12}$/Pt bilayers
Authors:
Stephan Geprägs,
Christoph Klewe,
Sibylle Meyer,
Dominik Graulich,
Felix Schade,
Marc Schneider,
Sonia Francoual,
Stephen P. Collins,
Katharina Ollefs,
Fabrice Wilhelm,
Andrei Rogalev,
Yves Joly,
Sebastian T. B. Goennenwein,
Matthias Opel,
Timo Kuschel,
Rudolf Gross
Abstract:
The magnetic state of heavy metal Pt thin films in proximity to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$ has been investigated systematically by means of x-ray magnetic circular dichroism and x-ray resonant magnetic reflectivity measurements combined with angle-dependent magnetotransport studies. To reveal intermixing effects as the possible cause for induced magnetic moments in Pt, we…
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The magnetic state of heavy metal Pt thin films in proximity to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$ has been investigated systematically by means of x-ray magnetic circular dichroism and x-ray resonant magnetic reflectivity measurements combined with angle-dependent magnetotransport studies. To reveal intermixing effects as the possible cause for induced magnetic moments in Pt, we compare thin film heterostructures with different order of the layer stacking and different interface properties. For standard Pt layers on Y$_{3}$Fe$_{5}$O$_{12}$ thin films, we do not detect any static magnetic polarization in Pt. These samples show an angle-dependent magnetoresistance behavior, which is consistent with the established spin Hall magnetoresistance. In contrast, for the inverted layer sequence, Y$_{3}$Fe$_{5}$O$_{12}$ thin films grown on Pt layers, Pt displays a finite induced magnetic moment comparable to that of all-metallic Pt/Fe bilayers. This magnetic moment is found to originate from finite intermixing at the Y$_{3}$Fe$_{5}$O$_{12}$/Pt interface. As a consequence, we found a complex angle-dependent magnetoresistance indicating a superposition of the spin Hall and the anisotropic magnetoresistance in these type of samples. Both effects can be disentangled from each other due to their different angle dependence and their characteristic temperature evolution.
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Submitted 8 October, 2020;
originally announced October 2020.
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Quantitative comparison of the magnetic proximity effect in Pt detected by XRMR and XMCD
Authors:
Dominik Graulich,
Jan Krieft,
Anastasiia Moskaltsova,
Johannes Demir,
Tobias Peters,
Tobias Pohlmann,
Florian Bertram,
Joachim Wollschläger,
Jose R. L. Mardegan,
Sonia Francoual,
Timo Kuschel
Abstract:
X-ray resonant magnetic reflectivity (XRMR) allows for the simultaneous measurement of structural, optical and magnetooptic properties and depth profiles of a variety of thin film samples. However, a same-beamtime same-sample systematic quantitative comparison of the magnetic properties observed with XRMR and x-ray magnetic circular dichroism (XMCD) is still pending. Here, the XRMR results (Pt L…
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X-ray resonant magnetic reflectivity (XRMR) allows for the simultaneous measurement of structural, optical and magnetooptic properties and depth profiles of a variety of thin film samples. However, a same-beamtime same-sample systematic quantitative comparison of the magnetic properties observed with XRMR and x-ray magnetic circular dichroism (XMCD) is still pending. Here, the XRMR results (Pt L$_{3}$ absorption edge) for the magnetic proximity effect in Pt deposited on the two different ferromagnetic materials Fe and Co$_{33}$Fe$_{67}$ are compared with quantitatively analyzed XMCD results. The obtained results are in very good quantitative agreement between the absorption-based (XMCD) and reflectivity-based (XRMR) techniques taking into account an ab initio calculated magnetooptic conversion factor for the XRMR analysis. Thus, it is shown that XRMR provides quantitative reliable spin depth profiles important for spintronic and spin caloritronic transport phenomena at this type of magnetic interfaces.
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Submitted 7 January, 2021; v1 submitted 5 October, 2020;
originally announced October 2020.
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Advanced data analysis procedure for hard x-ray resonant magnetic reflectivity discussed for Pt thin film samples of various complexity
Authors:
Jan Krieft,
Dominik Graulich,
Anastasiia Moskaltsova,
Laurence Bouchenoire,
Sonia Francoual,
Timo Kuschel
Abstract:
X-ray resonant magnetic reflectivity (XRMR) is a powerful method to determine the optical, structural and magnetic depth profiles of a variety of thin films. Here, we investigate samples of different complexity all measured at the Pt L$_3$ absorption edge to determine the optimal procedure for the analysis of the experimental XRMR curves, especially for nontrivial bi- and multilayer samples that i…
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X-ray resonant magnetic reflectivity (XRMR) is a powerful method to determine the optical, structural and magnetic depth profiles of a variety of thin films. Here, we investigate samples of different complexity all measured at the Pt L$_3$ absorption edge to determine the optimal procedure for the analysis of the experimental XRMR curves, especially for nontrivial bi- and multilayer samples that include differently bonded Pt from layer to layer. The software tool ReMagX is used to fit these data and model the magnetooptic depth profiles based on a highly adaptable layer stack which is modified to be a more precise and physically consistent representation of the real multilayer system. Various fitting algorithms, iterative optimization approaches and a detailed analysis of the asymmetry ratio features as well as $χ^2$ (goodness of fit) landscapes are utilized to improve the agreement between measurements and simulations. We present a step-by-step analysis procedure tailored to the Pt thin film systems to take advantage of the excellent magnetic sensitivity and depth resolution of XRMR.
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Submitted 17 April, 2020;
originally announced April 2020.
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Impact of the magnetic proximity effect in Pt on the total magnetic moment of Pt/Co/Ta trilayers studied by x-ray resonant magnetic reflectivity
Authors:
Anastasiia Moskaltsova,
Jan Krieft,
Dominik Graulich,
Tristan Matalla-Wagner,
Timo Kuschel
Abstract:
In this work, we study the influence of the magnetic proximity effect (MPE) in Pt on the total magnetic moment of thin film trilayer systems consisting of the ferromagnet (FM) Co adjacent to the heavy metals (HMs) Pt and Ta. We investigate the trilayer systems HM1/FM/HM2 with different stacking order as well as a reference bilayer without any MPE. X-ray resonant magnetic reflectivity (XRMR) is a p…
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In this work, we study the influence of the magnetic proximity effect (MPE) in Pt on the total magnetic moment of thin film trilayer systems consisting of the ferromagnet (FM) Co adjacent to the heavy metals (HMs) Pt and Ta. We investigate the trilayer systems HM1/FM/HM2 with different stacking order as well as a reference bilayer without any MPE. X-ray resonant magnetic reflectivity (XRMR) is a powerful tool to probe induced magnetism, especially when buried at interfaces in a multilayer. By using XRMR, we are able to obtain magnetic depth profiles of the structural, optical and magnetic parameters. By fitting the experimental data with a Gaussian-like magnetooptic profile taking the structural roughness at the interface into account, we can extract the magnetic moment of the spin-polarized layer. Comparing the obtained moments to the measured total moment of the sample, we can determine the impact of the MPE on the total magnetic moment of the system. Such information can be critical for analyzing spin transport experiments, including spin-orbit torque and spin Hall angle measurements, where the saturation magnetization $M_s$ has to be taken into account. Therefore, by combining magnetization measurements and XRMR methods we were able to get a complete picture of the magnetic moment distribution in these trilayer systems containing spin-polarized Pt.
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Submitted 19 January, 2020;
originally announced January 2020.
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Asymmetric modification of the magnetic proximity effect in Pt/Co/Pt trilayers by the insertion of a Ta buffer layer
Authors:
Ankan Mukhopadhyay,
Sarathlal Koyiloth Vayalil,
Dominik Graulich,
Imran Ahamed,
Sonia Francoual,
Arti Kashyap,
Timo Kuschel,
P S Anil Kumar
Abstract:
The magnetic proximity effect in top and bottom Pt layers induced by Co in Ta/Pt/Co/Pt multilayers has been studied by interface sensitive, element specific x-ray resonant magnetic reflectivity. The asymmetry ratio for circularly polarized x-rays of left and right helicity has been measured at the Pt $L_3$ absorption edge (11567 eV) with an in-plane magnetic field ($\pm158$ mT) to verify its magne…
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The magnetic proximity effect in top and bottom Pt layers induced by Co in Ta/Pt/Co/Pt multilayers has been studied by interface sensitive, element specific x-ray resonant magnetic reflectivity. The asymmetry ratio for circularly polarized x-rays of left and right helicity has been measured at the Pt $L_3$ absorption edge (11567 eV) with an in-plane magnetic field ($\pm158$ mT) to verify its magnetic origin. The proximity-induced magnetic moment in the bottom Pt layer decreases with the thickness of the Ta buffer layer. Grazing incidence x-ray diffraction has been carried out to show that the Ta buffer layer induces the growth of Pt(011) rather than Pt(111) which in turn reduces the induced moment. A detailed density functional theory study shows that an adjacent Co layer induces more magnetic moment in Pt(111) than in Pt(011). The manipulation of the magnetism in Pt by the insertion of a Ta buffer layer provides a new way of controlling the magnetic proximity effect which is of huge importance in spin-transport experiments across similar kind of interfaces.
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Submitted 27 November, 2019;
originally announced November 2019.
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Electrical Néel-order switching in magnetron-sputtered CuMnAs thin films
Authors:
Tristan Matalla-Wagner,
Matthias-Felix Rath,
Dominik Graulich,
Jan-Michael Schmalhorst,
Günter Reiss,
Markus Meinert
Abstract:
Antiferromagnetic materials as active components in spintronic devices promise insensitivity against external magnetic fields, the absence of own magnetic stray fields, and ultrafast dynamics at the picosecond time scale. Materials with certain crystal-symmetry show an intrinsic Néel-order spin-orbit torque that can efficiently switch the magnetic order of an antiferromagnet. The tetragonal varian…
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Antiferromagnetic materials as active components in spintronic devices promise insensitivity against external magnetic fields, the absence of own magnetic stray fields, and ultrafast dynamics at the picosecond time scale. Materials with certain crystal-symmetry show an intrinsic Néel-order spin-orbit torque that can efficiently switch the magnetic order of an antiferromagnet. The tetragonal variant of CuMnAs was shown to be electrically switchable by this intrinsic spin-orbit effect and its use in memory cells with memristive properties has been recently demonstrated for high-quality films grown with molecular beam epitaxy. Here, we demonstrate that the magnetic order of magnetron-sputtered CuMnAs films can also be manipulated by electrical current pulses. The switching efficiency and relaxation as a function of temperature, current density, and pulse width can be described by a thermal-activation model. Our findings demonstrate that CuMnAs can be fabricated with an industry-compatible deposition technique, which will accelerate the development cycle of devices based on this remarkable material.
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Submitted 25 June, 2019; v1 submitted 29 March, 2019;
originally announced March 2019.
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Electrical switching of antiferromagnetic Mn$_2$Au and the role of thermal activation
Authors:
Markus Meinert,
Dominik Graulich,
Tristan Matalla-Wagner
Abstract:
Electrical manipulation of antiferromagnets with specific symmetries offers the prospect of creating novel, antiferromagnetic spintronic devices. Such devices aim to make use of the insensitivity to external magnetic fields and the ultrafast dynamics at the picosecond timescale intrinsic to antiferromagnets. The possibility to electrically switch antiferromagnets was first predicted for Mn2Au and…
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Electrical manipulation of antiferromagnets with specific symmetries offers the prospect of creating novel, antiferromagnetic spintronic devices. Such devices aim to make use of the insensitivity to external magnetic fields and the ultrafast dynamics at the picosecond timescale intrinsic to antiferromagnets. The possibility to electrically switch antiferromagnets was first predicted for Mn2Au and then experimentally observed in tetragonal CuMnAs. Here, we report on the electrical switching and detection of the Neel order in epitaxial films of Mn2Au. The exponential dependences of the switching amplitude on the current density and the temperature are explained by a macroscopic thermal activation model taking into account the effect of the Joule heating in Hall cross devices and we observe that the thermal activation plays a key role in the reorientation process of the Neel order. Our model analysis shows that the electrically set Neel-state is long-term stable at room temperature, paving the way for practical applications in memory devices.
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Submitted 3 April, 2018; v1 submitted 21 June, 2017;
originally announced June 2017.
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Giant perpendicular exchange bias with antiferromagnetic MnN
Authors:
Philipp Zilske,
Dominik Graulich,
Mareike Dunz,
Markus Meinert
Abstract:
We investigated an out-of-plane exchange bias system that is based on the antiferromagnet MnN. Polycrystalline, highly textured film stacks of Ta / MnN / CoFeB / MgO / Ta were grown on SiO$_x$ by (reactive) magnetron sputtering and studied by x-ray diffraction and Kerr magnetometry. Nontrivial modifications of the exchange bias and the perpendicular magnetic anisotropy were observed both as functi…
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We investigated an out-of-plane exchange bias system that is based on the antiferromagnet MnN. Polycrystalline, highly textured film stacks of Ta / MnN / CoFeB / MgO / Ta were grown on SiO$_x$ by (reactive) magnetron sputtering and studied by x-ray diffraction and Kerr magnetometry. Nontrivial modifications of the exchange bias and the perpendicular magnetic anisotropy were observed both as functions of film thicknesses as well as field cooling temperatures. In optimized film stacks, a giant perpendicular exchange bias of 3600 Oe and a coercive field of 350 Oe were observed at room temperature. The effective interfacial exchange energy is estimated to be $J_\mathrm{eff} = 0.24$ mJ/m$^2$ and the effective uniaxial anisotropy constant of the antiferromagnet is $K_\mathrm{eff} = 24$ kJ/m$^3$. The maximum effective perpendicular anisotropy field of the CoFeB layer is $H_\mathrm{ani} = 3400$ Oe. These values are larger than any previously reported values. These results possibly open a route to magnetically stable, exchange biased perpendicularly magnetized spin valves.
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Submitted 25 April, 2017; v1 submitted 24 February, 2017;
originally announced February 2017.
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Large exchange bias in polycrystalline MnN/CoFe bilayers at room temperature
Authors:
Markus Meinert,
Björn Büker,
Dominik Graulich,
Mareike Dunz
Abstract:
We report on the new polycrystalline exchange bias system MnN/CoFe, which shows exchange bias of up to 1800Oe at room temperature with a coercive field around 600Oe. The room temperature values of the interfacial exchange energy and the effective uniaxial anisotropy are estimated to be $J_\mathrm{eff} = 0.41\,\mathrm{mJ}/\mathrm{m}^2$ and $K_\mathrm{eff} = 37\,\mathrm{kJ}\,/\,\mathrm{m}^3$. The th…
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We report on the new polycrystalline exchange bias system MnN/CoFe, which shows exchange bias of up to 1800Oe at room temperature with a coercive field around 600Oe. The room temperature values of the interfacial exchange energy and the effective uniaxial anisotropy are estimated to be $J_\mathrm{eff} = 0.41\,\mathrm{mJ}/\mathrm{m}^2$ and $K_\mathrm{eff} = 37\,\mathrm{kJ}\,/\,\mathrm{m}^3$. The thermal stability was found to be tunable by controlling the nitrogen content of the MnN. The maximum blocking temperature exceeds $325^\circ$C, however the median blocking temperature in the limit of thick MnN is $160^\circ$C. Good oxidation stability through self-passivation was observed, enabling the use of MnN in lithographically defined microstructures. As a proof-of-principle we demonstrate a simple GMR stack exchange biased with MnN, which shows clear separation between parallel and antiparallel magnetic states. These properties come along with a surprisingly simple manufacturing process for the MnN films.
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Submitted 18 September, 2015; v1 submitted 21 January, 2015;
originally announced January 2015.
